| 세션명 | 대학원생 구두발표 (II) |
|---|---|
| 발표장 | 제11-1회장 |
| 논문코드 | O11-9 |
| 발표일 | 2024-04-3 |
| 발표시간 | 15:15-15:30 |
| 논문제목 | Low-voltage operating memory diode with ferroelectric polymer - 2D perovskite semiconductor blends |
| 발표자 | 손정현 |
| 발표자 소속 | 부산대학교 |
| 저자 | 손정현, 정범진† |
| 소속 | 부산대학교 |
| 논문초록 | Solution processed organic ferroelectric memory diodes, fabricated through phase separation of the two polymers, are promising as flexible non-volatile memory with simplified device structures. However, conventional phase separated polymer memory diodes consume significant power due to modulation of the polarization of the ferroelectric. In this study, we successfully fabricated memory diodes capable of operating at low voltages by blending ferroelectric polymer with perovskite semiconductor, thereby enabling reduced power consumption. By optimizing the blend ratio, device structure, and processing conditions of perovskite semiconductor and ferroelectric polymer, we developed a memory diode operating at < 1 V, with an ON/OFF ratio of 105, retention time of 104 seconds and endurance of 100 cycles. |
THE POLYMER SOCIETY OF KOREA